Question #41136
The energy gap separating valence band from conduction is 0.7 ev for a material.
The material is
1
Expert's answer
2014-04-08T12:10:58-0400
Values of energy gaps (at 300K) from the table with semiconductor band gaps for Gallium antimonide (GaSb) and and Indium(III) nitride (InN) is equal to 0.7eV.

Answer: the material is Gallium antimonide (GaSb) or Indium(III) nitride (InN).

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10.04.14, 15:38

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Sanjeev
08.04.14, 19:34

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