Answer to Question #283314 in Electrical Engineering for MD HUMAYAN KABIR

Question

(1) The minimum subthreshold swing of a MOSFET at T = 350 K is ( ). 

A. 30 mV/decade B. 60 mV/decade C. 70 mV/decade D. 90 mV/decade 

(2) Which of the following causes the drain current to increase with VDS in the 

saturation region? ( ). 

A. channel length modulation B. inversion charge in the channel 

C. the body effect D. mobility degradation 

(3) A MOSFET is biased in the saturation region with a transconductance of gm = 10 

mS in the absence of channel length modulation effects. What would the gm be if 

the CLM parameter was λ = 0.02 V-1 for ΔVDS = 3V? ( ). 

A. 9.94 mS B. 10 mS C. 10.6 mS D. 0.6 mS 

(4) At room temperature, a possible value for the mobility of electrons in the inversion 

layer of a silicon n-channel MOSFET is ( ). 

A. 450 cm2/Vꞏs B. 1350 cm2/Vꞏs C. 1800 cm2/Vꞏs D. 3600 cm2/Vꞏs 

Answer 1

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