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# Answer to Question #283312 in Electrical Engineering for MD HUMAYAN KABIR

Question #283312

Consider a short n-channel MOSFET with Toxe = 2 nm and WT = 35 nm. Suppose

the threshold voltage (VT) for this device is simply defined to be the value of VGS at

which the normalized drain current IDS/(W/L) reaches 100 nA for VDS = 100 mV.

(1) Determine the subthreshold swing, S.

(2) If the normalized leakage current must be less than or equal to 10 pA when VGS

= 0 V and VDS = 100 mV, what is the minimum threshold voltage this device can

have?

(3) Why is a small value of S desirable?

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