Answer to Question #282103 in Electrical Engineering for MD HUMAYAN KABIR

Question

Consider an n-channel MOSFET with W = 15 μm, L = 2 μm, and COX = 6.9×10-8

F/cm2. Assume that the drain current in the linear region for VDS = 0.10 V is IDS = 35 

μA at VGS = 1.5 V and IDS = 75 μA at VGS = 2.5 V. Determine the inversion carrier 

mobility and the threshold voltage from experimental results.

Answer 1

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