Answer to Question #282100 in Electrical Engineering for MD HUMAYAN KABIR

Question

Consider an n+-poly-Si-gated long-channel n-MOSFET with W/L = 10, effective 

gate-oxide thickness Toxe = 2 nm, and substrate (body) dopant concentration NA = 

1018 cm-3. εSi02 = 3.9, εSi = 11.9. 

(1) Calculate the body effect parameter, γ. 

(2) How can the body effect be minimized?

Answer 1

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