Answer to Question #275751 in Electrical Engineering for Gaurav

Question #275751

Consider two p-n silicon junctions at T = 300 K reverse biased at Vr = 5 V. The impurity doping concentrations in junction A are Na = 10^18 cm^-3 and Nd = 10^15 cm^-3 and those in junction B are Na = 10^18 cm^-3 and Nd = 10^16 cm^-3. Calculate the ratio of the following parameters for junction A to junction B: (a) W. (b) Emax and (c) Cj.

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