Answer to Question #274838 in Electrical Engineering for MD HUMAYAN KABIR

Question

(3) Which of the following statements is (are) true about reverse bias breakdown due 

to impact ionization and Zener tunneling? ( ).

A. Tunneling breakdown generally occurs at lower voltages than impact ionization. 

B. Tunneling generally has a weaker temperature dependence that impact ionization. 

C. Significant tunneling only occurs when the junction is heavily doped. 

D. All of the above. 

(4) Consider an abrupt PN junction. Let Vbi be the built-in potential of this junction and 

VR be the applied reverse bias. If the junction capacitance (Cj) is 1 pF for Vbi + VR = 

1 V, then for Vbi + VR = 4 V, Cj will be ( ).

A. 4 pF B. 2 pF C. 0.25 pF D. 0.5 pF 

Answer 1

Answer:

3) D. All of the above. 

4) D. 0.5 pF