Answer to Question #268329 in Electrical Engineering for ASAP

Question

9.

Question 9

Use this information to answer Question 9-12:

Consider a step pn junction made of silicon. The doping densities in the p- and n-sides are N_A ​=5×1015 cm^−3 and N_D =1×1014 cm^−3 , respectively.

Find the built-in potential in unit of V

Answers within 5% error will be considered correct.

10.

Question 10

Determine the depletion region width, x_n ​, in the n-side in unit of μm.

Answers within 5% error will be considered correct.

11.

Question 11

Determine the depletion region width, x_p ​, in the p-side in unit of μm.

Answers within 5% error will be considered correct.

12.

Question 12

What is the applied bias voltage (in V) required to have x_n =30μm.

Answers within 5% error will be considered correct.

Answer 1

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