Answer to Question #268303 in Electrical Engineering for ASAP

Question

1.

Question 1

Use this information to answer Question 1-3:

Consider a step pn junction made of silicon. The p- and n-sides are doped such that E_C - E_F = 0.21 eV on the n-side and E_F - E_V ​=0.18eV on the p-side. The pn junction is under zero bias and kept at T=300K.

Find the doping density in the n-side in unit of cm^-3

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Answers within 5% error will be considered correct.

2.

Question 2

Find the doping density in the p-side in unit of cm^-3

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Answers within 5% error will be considered correct.

3.

Question 3

Find the built-in potential in unit of V

Answers within 5% error will be considered correct.

Answer 1

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