Answer to Question #109529 in Electrical Engineering for Bharti

Question #109529
Given a forward biased si diode with I = 1mA. If the diffusion capacitance is Cd =1microferad , what is the diffusion Length Lp? Assume that the doping of the P-side is much greater than that of the n-side . Use Dp = 13metersquare second.
1
Expert's answer
2020-04-19T07:39:46-0400

In this problem, we will need the following:

- diffusion length for holes, m;

- diffusion constant for holes, ;

- diffusion capacitance, μF;

- meal life time for holes, s;

- volt equivalent of temperature (26 mV for 300 K);

for Ge and for SI - a constant,

The diffusion length is


Therefore, combining all this, we get


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