Consider an ultrathin body n-channel MOSFET at 300 K with width
W = 50 μm, length L = 5 μm, body thickness = 20 nm, oxide thickness
h = 70 nm with dielectric constant κ=3.9, VT = 1 V and effective
mobility 800 cm2/Vs (assumed independent of gate voltage).
(a) Idsat if Vg = 2 V
(b) Ron when Vg = 2 V and Vd = 0 V
(c) gm when Vg = 2 V and Vd = 2 V
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