Answer to Question #102442 in Electrical Engineering for girish

Question #102442
Consider an ultrathin body n-channel MOSFET at 300 K with width
W = 50 μm, length L = 5 μm, body thickness = 20 nm, oxide thickness
h = 70 nm with dielectric constant κ=3.9, VT = 1 V and effective
mobility 800 cm2/Vs (assumed independent of gate voltage).
Calculate:
(a) Idsat if Vg = 2 V
(b) Ron when Vg = 2 V and Vd = 0 V
(c) gm when Vg = 2 V and Vd = 2 V
1
Expert's answer
2020-02-10T08:41:17-0500
Dear girish, your question requires a lot of work, which neither of our experts is ready to perform for free. We advise you to convert it to a fully qualified order and we will try to help you. Please click the link below to proceed: Submit order

Need a fast expert's response?

Submit order

and get a quick answer at the best price

for any assignment or question with DETAILED EXPLANATIONS!

Comments

No comments. Be first!

Leave a comment

Ask Your question

LATEST TUTORIALS
New on Blog
APPROVED BY CLIENTS